The DIFS-ST10 microwave plasma CVD reactor is designed for polycrystalline diamond film and wafers deposition on large area substrates of various materials. Smooth nanocrystalline diamond films can be deposited as well.
Basic parameters of the CVD system:
Microwave power source: 5kW at 2.45 GHz.
Number of feed gas channels: 4.
Reaction gases: CH4, H2 (main); O2, Ar, N2, CO2 optional.
Gas process pressure: 20-150 Torr.
Gas consumption: 1000 sccm (typical).
Substrate diameter: 3 inches.
Substrate temperature: 700 – 1000°С (control with a pyrometer).
MPCVD FOR DIAMONDS